Angle-Resolved Photoelectron Spectroscopy Studies of Initial Stage of Thermal Oxidation on 4H-SiC (0001) on-Axis and 4° Off-Axis Substrates

摘要

It is a key for improving the performance of SiC MOSFET to clarify SiO_2/SiC interface structure formed by thermal oxidation. We have investigated the initial stage of thermal oxidation on 4H-SiC (0001) on-axis and 4° off-axis substrates using angle-resolved photoelectron spectroscopy. The changes of the Si 2p_(3/2) and C 1s photoelectron spectra show that the off-axis has an influence on the chemical bonding state of SiO_2/SiC. On the other hand, there isn't difference in the oxidation rate between on-axis 4H-SiC(0001) and 4° off-axis 4H-SiC(0001).