Photoemission-based Characterization of Gate Dielectrics and Stack Interfaces

摘要

We have demonstrated quantitative evaluation of dielectric function and optical constants for gate dielectrics such as remote plasma-assisted chemical-vapor-deposition (CVD) SiO_2 and plasma-assisted atomic-layer-deposition (ALD) alumina-silicate in the energy range of 5 ～ 30 eV from the combination of the analysis of energy loss signals (ELS) of core-line photoelectrons and the results of Kramers-Kronig transformation of measured ELS. We have also show quantification of the energy distributions of occupied gap states in gate dielectrics and dielectric stack interfaces such as CVD SiO_2, ALD HfO_2 and ALD hafnia-silicates on GaN by means of total photoelectron yield spectroscopy (PYS) in the photo-excitation energy range from 3 ～ 10eV.