机译:锗的自由基氧化在金属-绝缘体-半导体栅堆叠中形成界面栅电介质GeO_2
Department of Electrical Engineering, Stanford University, 420 Via Palou Mall, Stanford, California 94305, USA;
Department of Electrical Engineering, Stanford University, 420 Via Palou Mall, Stanford, California 94305, USA;
Department of Electrical Engineering, Stanford University, 420 Via Palou Mall, Stanford, California 94305, USA;
Stanford Synchrotron Radiation Laboratory, Stanford Linear Acceleration Center, Menlo Park, California 94305, USA;
Department of Electrical Engineering, Stanford University, 420 Via Palou Mall, Stanford, California 94305, USA;
Department of Electrical Engineering, Stanford University, 420 Via Palou Mall, Stanford, California 94305, USA;
Stanford Synchrotron Radiation Laboratory, Stanford Linear Acceleration Center, Menlo Park, California 94305, USA;
Department of Electrical Engineering, Stanford University, 420 Via Palou Mall, Stanford, California 94305, USA;
Department of Electrical Engineering, Stanford University, 420 Via Palou Mall, Stanford, California 94305, USA;
机译:高K界面层GeO_2层的优化和定标:锗栅堆叠和GeO_2介电常数的提取
机译:在锗上形成栅极堆叠的金属氧化物掺杂的GeO_2的结构和热力学考虑
机译:基于锗/ hf氧化物的介电界面的界面过渡区:非晶Hf氧氮化硅与纳米晶Hfo_2栅堆叠之间的质量差异
机译:高κ/锗栅叠层的GeO_2 / Ge的本体和界面工程
机译:适用于未来规模化技术的高介电常数电介质和高迁移率半导体:氧化ha /锗CMOS器件的Ha基高K栅极电介质和界面工程
机译:后栅极介电处理对超临界流体技术对锗基金属氧化物半导体器件的影响
机译:Ge(100)上氧化铪/锗氧氮化物栅堆叠的化学键,界面和缺陷