Selective-Area Metal Organic Vapor-Phase Epitaxy of III-V on Si: What About Defect Density?

摘要

This study relates to the heteroepitaxy of InP buffer on patterned Si substrates using the selective area growth in trenches approach. We demonstrated in a first part a high control of the two-step InP buffer growth in STI trench width under 50 nm. In a second part, X-ray diffraction reciprocal space maps, rocking curves and pole figures were used to analyze the crystallinity and defect density of the InP layer.