Silicon Oxynitride Layers Fabricated by Plasma Enhanced Chemical Vapor Deposition (PECVD) for CMOS Devices

摘要

This work is devoted to the technology and characterization of silicon oxynitride layers (SiO_xN_y) formed by Plasma Enhanced Chemical Vapor Deposition (PECVD). In the course of this work thermal stability of deposited layers was also examined. Expected changes in structure, chemical composition and electro-physical properties of the obtained layers were investigated by means of spectroscopic ellipsometry (SE), X-ray photoelectron spectroscopy (XPS), secondary ion mass spectrometry (SIMS) and electrical characterization of manufactured test structures (metal-insulator-semiconductor (MIS) capacitors and MISFETs). Selected process parameters were chosen to fabricate SiO_xN_y layers which were introduced into MIS devices with double gate dielectric stack (based of hafnium dioxide). Electrical characterization of such MIS structures with PECVD silicon oxynitride have shown a feasibility of application of obtained system in non-volatile semiconductor memory (NVSM) devices.