Novel N-Containing Precursors of Nickel(II) for Film Deposition by MOCVD

摘要

The synthesis of volatile nickel(II) complexes with N-containing ligands like CH_3C(O,NCH_3)CH_2C(NR)CH_3 (R - H, CH_3) was performed. The substances were identified by various physicochemical methods. The thermal behavior of the compounds in the solid state was investigated by the method of thermogravimetry and difference-scanning calorimetry in vacuum and helium. Using the Knudsen method and static method the temperature dependences of saturated vapor pressure were studied, the standard thermodynamic parameters of sublimation and evaporation process were calculated. By means of high temperature mass spectrometry the thermolysis of complex vapor was studied in vacuum and gas by-products were determined. One of the complexes has been used as precursor for the film deposition. The films obtained were investigated by using XRD analysis.