Deposition of II-VI Thin Films by LP-MOCVD Using Novel Single-Source Precursors

摘要

Thin films of several zinc or cadmium chalcogenides have been deposited on glass substrates by low pressure metal-organic chemical vapour deposition (LP-MOCVD) using single-source precursors, [M{(EPiPr_2)_2N}_2] (M = CdII, ZnII and E = S, Se). X-ray single crystal structures show that [Zn{(EPiPr_2)_2N}_2] (E = S or Se) and [Zn{(SePPh_2)_2N}_2] are tetrahedrally distorted. TGA analyses showed that the precursors are volatile, making them suitable for MOCVD studies. As-deposited films were polycrystalline as confirmed by X-ray powder diffraction (XRPD) and their morphologies were studied by scanning electron microscope (SEM).