Aberration-corrected Scanning Transmission Electron Microscopy for Atomic-scale Characterization of Semiconductor Devices

摘要

Aberration correction in the scanning transmission electron microscope brings sub-Angstrom electron probe sizes and single atom sensitivity which enable the characterization of semiconductor devices and their defects with unprecedented detail. Further benefits include simultaneous bright field and dark field image acquisition and a new three-dimensional imaging technique. Here, we will review some major results obtained by aberration corrected scanning transmission electron microscopy and highlight some future research directions.