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Aluminum Silicon Carbide (AlSiC) Microprocessor Lids and Heat Sinks for Integrated Thermal Management Solutions

机译:碳化硅碳化硅(ALSIC)微处理器盖和散热器,用于集成热管理解决方案

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The next generation microprocessor assemblies will require integrated thermal management design solutions as the device density and clock speeds increase. These solutions will include a heat spreader, or lid, that is in contact with the heat generating microprocessor in the total packaging assembly. The materials choice for these integrated heat spreader solutions must provide the following material property attributes. 1. High bulk thermal conductivity 2. CTE compatibility with the Device and/or Microprocessor Assembly 3. EMI/RFI Shielding 4. Light weight 5.Dimensional Stability/Flatness (minimize bond line length resulting in a decreased Θ_(JC)). 6. Competitive Pricing AJSiC, Aluminum Silicon Carbide, metal matrix composite materials meet the material property, design and pricing demands for microprocessor assemblies that require integrated heat sink thermal management solutions. The CTE of AJSiC material and components can be tuned to be compatible with the specific heatsink application by controlling the SiC volume fraction in the AlSiC composite. AlSiC products with CTE values 7 ― 9 ppm/°C (30 ― 250°C) are suitable for direct attachment to GaAs and Si devices and ceramic substrate. Higher CTE materials 10 ―12 ppm/°C are used for attachment to printed circuit boards. The AlSiC thermal conductivity value is 180 ― 200 W/mK (compositional dependent) similar to CuMo and CuW materials. The material density of AJSiC is 1/3rd to 1/5th that of CuMo and CuW making AlSiC more suited to weight sensitive applications. The Ceramics Process Systems AlSiC components are cost-effectively fabricated to net-shape attaining close dimensional tolerances with minimal machining. The AlSiC material composition (hence CTE) is controlled by monitoring the SiC volume fraction of a tightly toleranced SiC preform fabricated with the QuickSet~(TM) injection molding process. The pore structure of the SiC preform is infiltrated with molten Al-metal (termed the QuickCast~(TM) process) to form the AlSiC composite material to the exact product dimensions defined by the infiltration mold. The combined processes form a fully dense, hermetic material of discrete SiC paniculate in a continuous Al-metal matrix phase. This process is currently used for high volume production for a number of product geometries and thermal management applications including MPU integrated heat spreading lid solutions. The ideal material properties coupled with AlSiC fabrication process provide low-cost high-performance functional integrated thermal management heat spreading solutions for microprocessor applications. This paper will illustrate the AlSiC material/design capabilities through microprocessor heat spreader examples.
机译:下一代微处理器组件将需要综合热管理的设计解决方案作为器件密度和时钟速度的增加。这些解决方案将包括一个散热器,或盖,即在与在总包装组件发热微处理器接触。的材料的选择。这些集成散热器的解决方案必须提供以下材料属性的属性。 1.高体积导热率2. CTE与设备和/或微处理器装配3. EMI / RFI屏蔽4.重量轻5.Dimensional稳定性/平整度兼容性(最小化导致粘合线长度减小Θ_(JC))。 6.竞争力的价格AJSiC,铝碳化硅,金属基复合材料满足材料特性,设计和那些要求整体的散热器片热管理解决方案的微处理器组件定价需求。 AJSiC材料和部件的CTE可被调整为与通过控制铝碳化硅复合碳化硅的体积分数的具体应用散热器兼容。铝碳化硅产品的CTE值7 - 9 PPM /℃(30 - 250℃)是合适的用于直接连接到GaAs和Si器件和陶瓷衬底。较高CTE的材料10 -12 PPM /℃被用于附接到印刷电路板。所述铝碳化硅的热导率值是180 - 200 W / mK的(组成依赖性)类似于CuMo等和CuW组成的材料。 AJSiC的材料密度为1/3至1 /第五那的CuMo等和CuW组成使铝碳化硅更适合于重量敏感的应用。的陶瓷工艺系统铝碳化硅部件成本有效地制造成最终形状以最小的加工实现紧密的尺寸公差。所述铝碳化硅材料组合物(因此CTE)是通过监视的碳化硅的体积分数控制的紧密公差的SiC与在QuickSet〜(TM)注射成型工艺制造的预成型体。 SiC预制件的孔结构中熔渗熔融的Al金属(称为快速铸造〜(TM)工艺),以形成铝碳化硅复合材料由浸润模具中定义的确切的产品的尺寸。将合并的过程形成在一个连续的Al金属基体相完全致密的,气密的离散的SiC圆锥状的材料。这个过程目前用于大量生产为多项产品的几何形状和热管理应用,包括MPU集成热扩散盖的解决方案。加上铝碳化硅制造过程中的理想的材料特性提供低成本高性能的功能性集成的热管理的热扩散对于微处理器应用的解决方案。本文将说明通过微处理器散热器例的铝碳化硅材料/设计能力。

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