首页> 外文会议>2000 HD International Conference on High-Density Interconnect and Systems Packaging, Apr 25-28, 2000, Denver, Colorado, USA >Aluminum Silicon Carbide (AlSiC) Microprocessor Lids and Heat Sinks for Integrated Thermal Management Solutions
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Aluminum Silicon Carbide (AlSiC) Microprocessor Lids and Heat Sinks for Integrated Thermal Management Solutions

机译:集成热管理解决方案的碳化硅铝(AlSiC)微处理器盒盖和散热器

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摘要

The next generation microprocessor assemblies will require integrated thermal management design solutions as the device density and clock speeds increase. These solutions will include a heat spreader, or lid, that is in contact with the heat generating microprocessor in the total packaging assembly. The materials choice for these integrated heat spreader solutions must provide the following material property attributes. 1. High bulk thermal conductivity 2. CTE compatibility with the Device and/or Microprocessor Assembly 3. EMI/RFI Shielding 4. Light weight 5.Dimensional Stability/Flatness (minimize bond line length resulting in a decreased Θ_(JC)). 6. Competitive Pricing AJSiC, Aluminum Silicon Carbide, metal matrix composite materials meet the material property, design and pricing demands for microprocessor assemblies that require integrated heat sink thermal management solutions. The CTE of AJSiC material and components can be tuned to be compatible with the specific heatsink application by controlling the SiC volume fraction in the AlSiC composite. AlSiC products with CTE values 7 ― 9 ppm/℃ (30 ― 250℃) are suitable for direct attachment to GaAs and Si devices and ceramic substrate. Higher CTE materials 10 ―12 ppm/℃ are used for attachment to printed circuit boards. The AlSiC thermal conductivity value is 180 ― 200 W/mK (compositional dependent) similar to CuMo and CuW materials. The material density of AJSiC is 1/3rd to 1/5th that of CuMo and CuW making AlSiC more suited to weight sensitive applications. The Ceramics Process Systems AlSiC components are cost-effectively fabricated to net-shape attaining close dimensional tolerances with minimal machining. The AlSiC material composition (hence CTE) is controlled by monitoring the SiC volume fraction of a tightly toleranced SiC preform fabricated with the QuickSet~(TM) injection molding process. The pore structure of the SiC preform is infiltrated with molten Al-metal (termed the QuickCast~(TM) process) to form the AlSiC composite material to the exact product dimensions defined by the infiltration mold. The combined processes form a fully dense, hermetic material of discrete SiC paniculate in a continuous Al-metal matrix phase. This process is currently used for high volume production for a number of product geometries and thermal management applications including MPU integrated heat spreading lid solutions. The ideal material properties coupled with AlSiC fabrication process provide low-cost high-performance functional integrated thermal management heat spreading solutions for microprocessor applications. This paper will illustrate the AlSiC material/design capabilities through microprocessor heat spreader examples.
机译:随着设备密度和时钟速度的提高,下一代微处理器组件将需要集成的热管理设计解决方案。这些解决方案将包括一个散热器或盖子,该散热器或盖子与整个包装组件中的发热微处理器接触。这些集成式散热器解决方案的材料选择必须提供以下材料属性属性。 1.高整体导热率2.与设备和/或微处理器组件的CTE兼容性3. EMI / RFI屏蔽4.重量轻5.尺寸稳定性/平面度(最小化粘合线长度,导致Θ_(JC)减小)。 6.具竞争力的价格AJSiC,铝碳化硅,金属基复合材料满足需要集成散热器热管理解决方案的微处理器组件的材料性能,设计和价格要求。通过控制AlSiC复合材料中的SiC体积分数,可以将AJSiC材料和组件的CTE调整为与特定的散热器应用兼容。 CTE值为7到9 ppm /℃(30到250℃)的AlSiC产品适合直接连接到GaAs和Si器件以及陶瓷基板。 CTE 10 – 12 ppm /℃的较高材料用于附着到印刷电路板上。与CuMo和CuW材料相似,AlSiC的导热系数为180-200 W / mK(取决于成分)。 AJSiC的材料密度是CuMo和CuW的1/3至1/5,使AlSiC更适合于重量敏感的应用。陶瓷工艺系统AlSiC组件以具有成本效益的方式加工成网状,并能以最小的机加工获得接近的尺寸公差。通过监视用QuickSetTM注射成型工艺制造的紧密公差SiC预成型坯的SiC体积分数,可以控制AlSiC材料成分(因此称为CTE)。 SiC预制件的孔结构被熔融的Al-金属渗透(称为QuickCast〜TM工艺),以形成AlSiC复合材料,其尺寸与渗透模具确定的产品尺寸相同。结合的过程形成了连续的Al-金属基体相中离散的SiC颗粒的完全致密的密封材料。该工艺目前用于大量产品几何形状和热管理应用的大批量生产,包括MPU集成的散热盖解决方案。理想的材料性能以及AlSiC制造工艺为微处理器应用提供了低成本,高性能,功能集成的热管理散热解决方案。本文将通过微处理器散热器示例说明AlSiC材料/设计功能。

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