The study of enhanced formation of low-resistivity C54-TiSi_2 by high-resolution transmission electron microscopy.

摘要

Low-resistivity C54-TiSi_2 is currently the most widely used silicide for the self-aligned technology of ultralarge scale integrated circuits. However, as the device dimensions scale down to deep submicron region, it has been found that the high-resistivity C49- to C54-TiSi_2 conversion becomes increasingly difficult, the fact attributed to the low density of nucleation sites for the C54-TiSi_2 phase. The desire to form C54-TiSi_2 completely in a submicron structure has led to extensive research in increasing the C54-TiSi_2 nucleation density. One promising method was found to be high temperature sputtering (HTS).