Structural,electrical and photoelectrical properties of Cd_xPb_(1-x)S thin films prepared by Chemical Bath Deposition method

摘要

It is known that of great interest for IR wavelength telecommunication systems are the materials with the maximum photoconductive signal at 1550 nm.This corresponds to an energy gap of about 0.8 eV.The reason of this study was to see if it is possible to obtain ternary compounds with variable gap by Chemical Bath Deposition method and in such a way,photosensitive films with maximum wavelength around 1550 nm.