Transient Phenomena during the Self-Heating of Silicon Devices Operating at Low Temperatures

摘要

In spite of the several experimental findings regarding the cryogenic self-heating of Si devices [1-6],little effort,if any,has been expended in order to understand the actual origin of the measured temperature rise and the observed transients.The transient response to a voltage step was used as a monitor for self-heating [2-4],regardless of the appropriateness of the assumptions oh which this technique is based: thermal transients were assumed to be the slowest processes during the relaxation of the sample; thus the slow variation of the current was ascribed to the heating of the devices.