Novel wet taper etching of interconnects on large area substrates using galvanic reaction

摘要

We propose a novel wet taper etching process with an accurate control of taper angles and side etch length of interconnects on large area substrates based upon electrochemical reaction.A chromium-molybdenum alloy film was deposited over a pure chromium film.After the lithography process,this layered film was wet etched all at once with the same chemical etchant of cerie ammonium nitrate solution.Etch rates and corrosion potentials of Cr-Mo alloys were measured as a function of Mo content.