Expanded mode alignment tolerant optical structures will play an important role in low-cost, large-scale packaging of optoelectronic devices. In this paper, we present two expanded mode structures for operation at 1.55 $mu@m. Our devices use single epitaxial growth and conventional fabrication schemes. High butt-coupling efficiencies ($GRT 40%) to a single mode fiber with relaxed alignment tolerances were achieved. The first of our devices uses adiabatic transformation over 500 $mu@m. The second device uses resonant coupling over a much shorter region of 200 $mu@m. The second scheme offers an interesting possibility for monolithic integration of active-passive components. We present the design and simulation results of such an integrated device.
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机译：扩展模式对准耐光光学结构将在低成本，大规模包装的光电器件上发挥重要作用。在本文中，我们在1.55 $ mu @ m下呈现两个扩展模式结构。我们的设备使用单一外延生长和传统的制造方案。实现了具有放松对准公差的单模光纤的高对接耦合效率（$ 40％）。我们的第一个设备使用了超过500美元的绝热转换。第二个设备使用谐振耦合超过200 $ mu @ m的更短区域。第二种方案提供了一种有趣的可能性，可以单片集成有源无源组件。我们介绍了这种集成装置的设计和仿真结果。
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