Abstract: Expanded mode alignment tolerant optical structureswill play an important role in low-cost, large-scalepackaging of optoelectronic devices. In this paper, wepresent two expanded mode structures for operation at1.55 $mu@m. Our devices use single epitaxial growth andconventional fabrication schemes. High butt-couplingefficiencies ($GRT 40%) to a single mode fiber withrelaxed alignment tolerances were achieved. The firstof our devices uses adiabatic transformation over 500$mu@m. The second device uses resonant coupling over amuch shorter region of 200 $mu@m. The second schemeoffers an interesting possibility for monolithicintegration of active-passive components. We presentthe design and simulation results of such an integrateddevice.!18
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机译：摘要：扩展模式对准容限的光学结构将在低成本，大规模封装光电器件中发挥重要作用。在本文中，我们提出了两种扩展模式结构，用于在1.55μm@ m下运行。我们的器件使用单外延生长和常规制造方案。达到了高的对接耦合效率（$ GRT 40％）到具有松弛对准公差的单模光纤。我们的第一台设备使用了绝热转换，超过500 $ mu @ m。第二个器件在200μm的更短区域上使用谐振耦合。第二种方案为主动-被动组件的单片集成提供了一种有趣的可能性。我们介绍了这种集成设备的设计和仿真结果！18
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