Post annealing studies of C{sub}60 ion implanted thin films

摘要

Physical properties of multiple-energy B-ion implanted C{sub}60 thin films were investigated for various doses. Fourier Transform infra-red Spectroscopy (FTIR) results indicate the structural transformation of C{sub}60 to amorphous carbon phase during implantation. The conductivity type of the implanted films is found to he p-type and the conductivity measurements reveal a dramatic increase in the conductivity with ion implantation. Temperature dependent conductivity shows the semiconducting nature of the B-ion implanted films. The optical absorption coefficient and optical gap of the implanted fits have hem observed as a function of B-ion dose. Measurements on implanted films subjected to thermal annealing indicate the removal of the defects caused during the implantation. Ion implantation-induced defects are found to partially annihilate with the annealing temperature. Electrical conductivity and optical gap are determined in the post-implanted films. The observation of the systematic increase in the conductivity of the annealed films is due to the removal of the defects and the formation of defect flee heron impurity acceptor.