Initial growth stages of CeO_2 nanosystems by Plasma-Enhanced Chemical Vapor Deposition

摘要

Nanocrystalline CeO_2 thin films were synthesized by Plasma-Enhanced Chemical Vapor Deposition using Ce(dpm)_4 as precursor. Film growth was accomplished at 150-300°C either in Ar or in Ar-O_2 plasmas on SiO_2 and Si(1 00) with the aim of studying the effects of substrate temperature and O_2 content on coating characteristics. Film microstructure as a function of the synthesis conditions was investigated by Glancing Incidence X-Ray Diffraction (GIXRD) and Transmission Electron Microscopy (TEM), while surface morphology was analyzed by Atomic Force Microscopy (AFM). Surface and in-depth chemical composition was studied by X-ray Photoelectron Spectroscopy (XPS) and Secondary Ion Mass Spectrometry (SIMS).