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Nonstoichiometry of epitaxial FeTiO{sub}(3+δ) films

机译:外延Fetio {sub}(3 +δ)薄膜的非芯片测量

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Epitaxial thin films of (001)-oriented FeTiO{sub}(3+δ) were prepared on α-Al{sub}2O{sub}3(001) single crystalline substrates by helicon plasma sputtering technique. The FeTiO{sub}(3+δ) films had large oxygen nonstoichiometry, which seriously depended on both substrate temperature and oxygen pressure during the sputtering deposition. The valence states of Fe ions in FeTiO{sub}(3+δ) changed monotonically from Fe{sup}(2+) to Fe{sup}3+ with decreasing the substrate temperature from 900 to 400°C or with increasing the oxygen pressure from 0.9 to 1.8013310{sup}(-6) Pa. The change of Fe valence states from Fe{sup}(2+) to Fe{sup}(3+) induced the magnetic phase transition only for the films prepared at 900°C. The films containing Fe{sup}(2+) were paramagnetic while those with Fe{sup}(3+) were antiferromagnetic at room temperature. The oxygen nonstoichiometry of the FeTiO{sub}(3+δ) films was probably produced by cation vacancies and disarrangement of Fe{sup}(3+) and Ti{sup}(4+) ions, which randomly occupied both interstitial and substitutional sites of the FeTiO{sub}3 related structure.
机译:通过Helicon等离子体溅射技术在α-Al {Sub} 2O {Sub} 3(001)单晶基板上制备(001)的外延薄膜(001)的胎儿{sub}(3 +δ)。 Fetio {Sub}(3 +δ)膜具有大的氧不沸石,其在溅射沉积期间严重依赖于衬底温度和氧气压力。 Fetio {sub}(3 +δ)中的Fe离子的价态从Fe {sup}(2+)到Fe {sup} 3+在900至400℃下减小到Fe {sup}(2+)到Fe {sup} 3+或随着氧气的增加从0.9到1.8013310 {sup}( - 6)pa的压力。Fe {sup}(2+)到Fe {sup}(3+)的Fe价态的变化仅诱导磁相过渡仅适用于900的薄膜°C。含有Fe {sup}(2+)的薄膜是顺磁性的,而具有Fe {sup}(3+)的那些在室温下是反铁磁体。 Fetio {sub}(3 +δ)膜的氧不沸学术可能是通过阳离子障碍和Fe {sup}(3+)和ti {sup}(4 +)离子的腐蚀,随机占用的间隙和替代Fetio {sub} 3相关结构的网站。

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