Spectroscopic Properties of Cubic SiC on Si

摘要

Spectroscopic studies are reported for cubic SiC grown on Si by chemical vapour deposition (CVD) manufacture technique. The UV excitation room temperature photoluminescence (PL)-Raman spectra exhibited 2.3 eV luminescence line due to RT recombination over the SiC indirect band gap. In addition to the optical phonons from cubic SiC we observed new Raman modes near 620 and 833 cm~(-1). A comprehensive analysis of the dynamical properties of defects using Green's function theory has suggested isolated impurity vibrations to be the possible origin for the additional phonons observed by Raman spectroscopy.