Comparative Study of trap levels observed in undoped and Si-doped GaN

摘要

In this paper,deep level defects in undoped and Si-doped GaN have been studied using digital deep level transient spectroscopy.Common trap levels at E_c-E_T approx 0.15-0.20 eV and 0.59-0.62 eV were detected for both undoped and Si-doped samples.For the doped samples,three additional defect level at E_c-E_t approx 0.11,0.28,and 0.45 eV were detected.