Homoepitaxial 4H-SiC films grown by microwave plasma chemical vapor deposition

摘要

Homoepitaxial 4H-SiC film growth has been carried out at temperatures as low as 1000 degC on 4H-SiC of Si-face and C-face by microwave plasma chemical vapor deposition method.The extent of step-bunching of those films grown on C-face was low in comparison with that on Si-face,although large and irregular shaped step-bunching was occurred in both films grown on Si-face and C-face.For the first step to application for the electrical devices,the electrical properties of the muPCVD grown films was characterized by fabricating simple pn-junction structure.The obtained SiC films indicated n-type conductivity and the amount of background donor impurities of the films grown on C-face substrates were lower by one order than that on Si-face.