Fabrication and photoluminescence of GaN/sapphire submicron-scale structure with nanometre scale resolution

摘要

We report the fabrication of submicon-scale structures using high resolution etching to transfer patterns from PMMA into GaN with an intermediate mask consisting of a bilayer of titanium and SiN_x. Atomic force microscopy measurements showed the high quality of the structures etched in CH_4/H_2 as well as an erosion of the mask. The low temperature photoluminescence measured on the etched structures was almost as strong as that from the unetched surface.