Distribution of tellurium in melt-grown ZnSe(Te) crystals

摘要

The properties of semiconductor scintillation crystals are largely determined by the presence and distribution of the activator dopant. Influence of growth technological parameters (overheating #DELTA#T, inert gas pressure P, crystallization rate V_k) upon distribution of tellurium dopant was studied for ZnSe(Te) crystals grown by Bridgman technique in compression furnaces. Values of the "apparent" distribution coefficient of tellurium (k_Te) over crystal length were shown to be dependent on #DELTA#T and the related value of charge carry-over (#DELTA#m/m_0). It was established that at #DELTA#m/m_0=12