首页> 外文会议>Symposium E on thin film materials for large area electronics of the E-MRS 1998 spring conference >Performances exhibited by large area ITO layers produced by r.f. magnetron sputtering
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Performances exhibited by large area ITO layers produced by r.f. magnetron sputtering

机译:由R.F产生的大面积ITO层表现出的性能。磁控溅射

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This work refers to the main electro-optical characteristics exhibited by large area indium tin oxide films (300 * 400 mm) produced by r.f. magnetron sputtering under different oxygen concentrations and deposition pressures. Besides that, the ageing effect on the electro-optical characteristics of the films produced was also analyzed. The results achieved show that the film transparency and conductivity were highly improved (more than four orders of magnitude) by first annealing them in air at 470 °C, followed by a reannealed stage under vacuum, in a hydrogen atmosphere, at 350 °C. The ageing tests show that film degradation occurs when the films are produced at oxygen concentrations above 10% and/or at deposition pressures above 1.2 * 10~(-2) mbar.
机译:该工作是指由R.F产生的大面积氧化铟锡(300×400mm)呈现的主要电光特性。在不同氧浓度和沉积压力下磁控溅射。除此之外,还分析了对所生产的薄膜的电光特性的老化效应。实现的结果表明,通过在470℃的470℃下在空气中退火,在470℃下的空气中的在空气中进行高度改善(超过四个数量级),在350℃下在真空下进行重新确定的阶段,在350℃下在真空下进行重新确定的阶段。衰老试验表明,当薄膜以高于10%和/或沉积压力以上1.2×10〜(-2)曼巴氏时产生薄膜时,发生膜劣化。

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