Method for Preparing Grephene Oxide Thin Layer by Radio Frequency Magnetron Sputtering and Grephene Oxide Thin Layer Produced by the Same

摘要

The present invention relates to a method for preparing a graphene oxide thin film using a radio frequency (RF) magnetron sputtering method and a graphene oxide thin film, and by directly manufacturing a graphene oxide thin film by sputtering an graphite target oxidized by using the RF magnetron sputtering method, high quality of a thin film which is not harmful to human body can be manufactured by a simple process and easy operations, and relatively low expenses and less equipment are required thereby being economical. Especially, through evaporation time adjustment, thickness of the thin film can be freely adjusted.