Toward cavity-QED strong coupling of a semiconductor quantum dot to an external optical micro-cavity

机译：朝向外部光学微腔的半导体量子点的腔QED强耦合

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A hemispherical cavity containing interface-fluctuation GaAs quantum dots was constructed to achieve cavity-QED strong coupling between a cavity mode and a single QD. It consists of a 50-micron radius-of-curvature mirror and a semiconductor DBR mirror.

机译：构造了包含界面波动GaAs量子点的半球形腔以实现腔模式和单个QD之间的腔QED强耦合。它由50微米半径的曲率半导体和半导体DBR镜组成。

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《Quantum Electronics and Laser Science Conference》|2003年||共3页
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J. Hannigan; Guoqiang Cui; R. Loeckenhoff; D. Foster; F. M. Matinaga; H. Wang; M. G. Raymer; M. Holland; S. Bhongale; S. Mosor; S. Chatterjee; H. M. Gibbs; G. Khitrova; TOPS;
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4. Toward cavity-QED strong coupling of a semiconductor quantum dot to an external optical micro-cavity [C] . J. Hannigan, Guoqiang Cui, R. Loeckenhoff, Quantum Electronics and Laser Science Conference . 2003

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5. Hemispherical optical microcavity for cavity-QED strong coupling. [D] . Hannigan, Justin Michio. 2009

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Toward cavity-QED strong coupling of a semiconductor quantum dot to an external optical micro-cavity

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