Characterization of diamond like carbon film fabricated by ECR plasma CVD at room temperature

摘要

Low temperature (about 50 deg C) fabrication of diamond like carbon (DLC) films with a high hardness (>3000Hv) and a high electrical resistivity (>10~(11) OMEGA cm) has been achieved. In order to obtain such a result, the effect of ion impingement on the growth and structural change of DLC films in an electron cyclotron resonance (ECR) plasma enhanced chemical vapor deposition (CVD) method was investigated. It was confirmed that ion impingement was fundamentally required in the growth of DLC films. Furthermore, impingement with ions energized by bias voltages between 50 V and 150 V had a major influence on the sp~2/sp~3 configuration in DLC films. This configuration is found to be rather sensitive to optoelectronic properties but not so sensitive to film hardness.