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Modeling of atom diffusion and segregation in semiconductor heterostructures

机译:半导体异质结构原子扩散与偏析的建模

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We propose a new approach for modeling of impurity diffusion at semiconductor heterointerfaces. The approach is based on the notion of a common energy reference for highly localized defects. It is shown that in the kick-out process, the segregation of group II acceptors is controlled by the valence band offsets among different constituent layers of the heterostructure. Extensive numerical modeling of the diffusion provides an explanation for the experimentally observed strong segregation of Zn and Be acceptors in the lattice matched InP/InGaAs, InP/InGaAsP and GaAs/AlGaAs heterostructures.
机译:我们提出了一种新的杂质扩散在半导体异待植物上建模的新方法。该方法基于对高度局部缺陷的常见能量参考的概念。结果表明,在启动过程中,II族受体的偏析由异质结构的不同组成层之间的价带偏移来控制。扩散的广泛数值建模提供了实验观察到的Zn的强偏析的解释,并且在晶格匹配的inp / Ingaas,InP / IngaAsP和GaAs / Algaas异质结构中是受体。

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