METHOD FOR FORMING TRENCH ISOLATION LAYER OF SEMICONDUCTOR DEVICE WITH ION-IMPLANTED LAYER FOR PREVENTING DIFFUSION AND SEGREGATION

摘要

Purpose: a kind of method, the trench isolation layer for being used to form semiconductor device are arranged to improve hump and leakage current by forming an ion implanted layer, are used to prevent diffusion and isolation in a bar ditch. Construction: a bar ditch are formed in the semi-conductive substrate (11) of a field region by using a mask layer (12). One ion implanted layer (100) is for preventing diffusion and isolation from entering exposed ditch by implantation indium ion and being formed. One oxide layer (14) is formed in the ditch by wall oxidation processes. One trench isolation layer (15) is then formed in ditch.