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Damping Oscillation of Buckled Dimers Induced by a Single Dimer Vacancy on Si(100) 2×1 Surface Near Critical Temperature

机译:通过在临界温度附近的Si(100)2×1表面上的单二聚体空位引起的弯曲二聚体振荡

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We have investigated the effects of vacancies on a phase transition by a Monte Carlo simulation using an Ising system, where the two states of a buckled dimer were regarded as spins up and down. First, we calculated the correlation length in the model, and subsequently, we introduced single-dimer vacancies to investigate their effect on the phase transition. As a result, not only the calculated specific heat became diffuse as a function of temperature, but also a dumping zigzag-chain type of an STM image was present in the vicinity of an isolated vacancy near the critical temperature T_c~(MC) (≈320 K) due to a strain field. The strain was considered to be a local next nearest neighbour antiferromagnetic one, where the strain energy (A) was deduced to be about 20 meV. We concluded that the frustrated STM image appeared as a result of the competition between the calculated critical temperature T_c~(MC) and the strain energy A.
机译:我们已经研究了使用ising系统通过蒙特卡罗模拟对孔的阶段过渡的效果,其中屈曲二聚体的两个状态被视为旋转上下。首先,我们计算了模型中的相关长度,随后,我们介绍了单二聚体空缺,以研究它们对相转变的影响。结果,不仅计算出的特定热量作为温度的函数而变化,而且还存在STM图像的倾倾字链类型在临界温度T_C〜(MC)附近的隔离空位附近(≈ 320 k)由于应变场。将该菌株被认为是局部下一个最近邻的反铁磁体1,其中推导出应变能量(a)为约20meV。我们得出结论,由于计算的临界温度T_C〜(MC)与应变能量A之间的竞争,因此出现了令人沮丧的STM图像。

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