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Carrier tunneling in ZnCdSe/ZnSe asymmetric double-quantum-well structure

机译:ZnCDSE / ZnSE非对称双量子阱结构中的载波隧道

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Optical characteristics of ZnCdSe/ZnSe asymmetric double- quantum-well structure grown by LP-MOCVD were studied. By analyzing the photoluminescence spectra, we found that the excitation power and temperature could influence the tunneling of the excitons, and due to different tunneling time of electrons and holes, space-charge effect was observed.
机译:研究了LP-MOCVD生长的ZNCDSE / ZnSE非对称双量子井结构的光学特性。通过分析光致发光光谱,我们发现激发功率和温度可以影响激子的隧道,并且由于电子和孔的不同隧道时间,观察到空间电荷效应。

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