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Process and Integration Issues in the Fabrication of Copper Interconnects

机译:铜互连制造中的过程和集成问题

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摘要

The transition from aluminum to copper interconnects in semiconductor manufacturing is rapidly accelerating, as evidenced by recent press announcements from major microprocessor companies. As is now well known, two primary factors drive this transition: The lower resistivity and increased electromigration resistance that copper offers relative to aluminum.
机译:从铝制到半导体制造中的铜互连的过渡迅速加速,正如主要微处理器公司的最近新闻通知所证明。如今,众所周知,两个主要因素驱动该过渡:铜相对于铝的电阻率和电渗透率增加。

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