RF bipolar transistors in CMOS compatible technologies

摘要

A RF Bipolar Transistor integrated to a standard 0.35μm CMOS process is presented. This BiCMOS technology features a single-poly NPN transistor with simulated f{sub}τ=16GHz and BV{sub}(CEO) = 6.4V. With implanted base and no trench isolation, this device is truly compatible with standard CMOS technology and offers good performance compare to previously published results of BiCMOS technologies.