Direct electrical characterization of metal-induced-lateral-crystallization regions by spreading resistance probe measurements

摘要

Spreading resistance probe (SRP) measurement has been used to directly study the electrical characteristics of MILC poly silicon film. The measurement requires only small regions (～100μm × 100μm) and the results have shown the improvement of the quality of resistance after a low temperature (6250C) and short time (1 hour) annealing. The new method can provide a fast, simple and inexpensive electrical characterization method instead of fabrication of devices such as resistor and transistors.