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Application Of New Empirical Model To The Electron Beam Lithography Process With Chemically Amplified Resists

机译：新型经验模型在化学放大抗蚀剂中将新的经验模型应用于电子束光刻工艺

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《International Microprocesses and Nanotechnology Conference》|1998年||共2页
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作者
Young-Mog Ham; Cheol Hur; Institute of Electric and Electronic Engineer;
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中图分类自动化技术、计算机技术;
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专利

1. Theoretical study of fabrication of line-and-space patterns with 7 nm quarter-pitch using electron beam lithography with chemically amplified resist process: V. Optimum beam size [J] . Kozawa Takahiro Japanese journal of applied physics . 2016,第10期

机译：使用化学放大的抗蚀剂工艺的电子束光刻技术制造7纳米四分之一间距的线和间隔图案的理论研究：V.最佳束大小
2. Towards novel non-chemically amplified (n-CARS) negative resists for electron beam lithography applications [J] . Vikram Singh, V. S. V. Satyanarayana, Satinder K. Sharma Journal of Materials Chemistry, C. materials for optical and electronic devices . 2014,第12期

机译：面向电子束光刻应用的新型非化学放大（n-CARS）负性抗蚀剂
3. Recent Advances in the Development of Chemically Amplified Resists for Applications in Electron Beam Lithography [J] . David R.Medeiros Journal of Photopolymer Science and Technology . 2002,第3期

机译：化学放大抗蚀剂在电子束光刻中的应用的最新进展
4. Application Of New Empirical Model To The Electron Beam Lithography Process With Chemically Amplified Resists [C] . Young-Mog Ham, Cheol Hur . 1998

机译：新的经验模型在化学放大抗蚀剂电子束光刻工艺中的应用
5. Development and Applications of Thin Film Resists for Electron Beam Lithography. [D] . Fairley, Kurtis C. 2015

机译：电子束光刻光刻胶的研制与应用。
6. SML resist processing for high-aspect-ratio and high-sensitivity electron beam lithography [O] . Mohammad Ali Mohammad, Steven K Dew, Maria Stepanova 2013

机译：用于高纵横比和高灵敏度电子束光刻的SML抗蚀剂处理
7. Recent Advances in the Development of Chemically Amplified Resists for Applications in Electron Beam Lithography. [O] . David R. Medeiros 2002

机译：电子束光刻应用化学放大抗蚀剂的最新进展。

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