Polymer for electron beam lithography and chemically amplified positive resist composition including the same

摘要

excellent sensitivity and resolution , and line edge roughness and improved coating stability after a delay , after exposure stability of the resist performance , such as delay stability is excellent , for improving the stability of the resist line width variation of the stand in the vacuum chamber of the electron beam irradiation device , a chemical amplification type for electron beam lithography comprises a polymer resin represented by the following formula , and this the positive resist composition is disclosed . ; in the above formula R ^* , R ^** , R ₁ , R ₂ , R ₃ , R _4, n, x, y and z are as defined in the specification .