The smooth and highly oriented AlN films were obtained using pulsed laser depositionfrom sintered AlN target in a nitrogen ambient.The XRD investigation revealede that highly oriented AlN thinfilms along the c-axis (AlN (0002)) normal to the substrate were obtained both on Si(111) and on Si(100) substrates.The (0002) x-ray peak width became narrower with increasing substrate temperature. The CL investigation showed that AlN films at high laser energy density (E_d) indicated CL Peak at shorter wavelength (306 nm) than that at low E_d (394nm). N/Al atomic ratio in AlN films grown at high E_d also increased as comparison with the films grown at low E_d.
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