首页> 外国专利> ALUMINUM NITRIDE SUBSTRATE, ALUMINUM NITRIDE SUBSTRATE HAVING THIN FILM, AND SUBMOUNT MATERIAL FOR LASER LIGHT- EMITTING ELEMENT OBTAINED BY USING THE SAME

ALUMINUM NITRIDE SUBSTRATE, ALUMINUM NITRIDE SUBSTRATE HAVING THIN FILM, AND SUBMOUNT MATERIAL FOR LASER LIGHT- EMITTING ELEMENT OBTAINED BY USING THE SAME

机译:氮化铝基板,具有薄膜的氮化铝基板以及通过使用该基板获得的用于激光发光元件的基板材料

摘要

PROBLEM TO BE SOLVED: To provide an aluminum nitride substrate having a via hole in which the falling-off of crystal particles is prevented, and to provide an aluminum nitride substrate having a thin film having high reliability in connection.;SOLUTION: The aluminum nitride substrate having the via hole is characterized in that an electroconductive part mainly composed of tungsten or molybdenum is provided at the via hole, and 15 to 30 pieces of the crystal particles of the aluminum nitride are present on the straight line having the length of 50 μm. The aluminum nitride substrate having the thin film is characterized in that an electroconductive film is formed on one surface or both surfaces of the aluminum nitride substrate. The submount material for the laser light- emitting element is obtained by using the aluminum nitride substrate having the thin film.;COPYRIGHT: (C)2003,JPO
机译:解决的问题:提供具有通孔的氮化铝衬底,其中防止了晶体颗粒的脱落,并且提供具有连接可靠性高的薄膜的氮化铝衬底。具有通孔的基板的特征在于,在通孔上设置主要由钨或钼构成的导电部,在长度为50μm的直线上存在15〜30个氮化铝的结晶粒子。 ; m。具有薄膜的氮化铝基板的特征在于,在氮化铝基板的一个表面或两个表面上形成有导电膜。激光发射元件的底座材料是通过使用具有薄膜的氮化铝基板获得的。版权所有:(C)2003,JPO

著录项

  • 公开/公告号JP2003192442A

    专利类型

  • 公开/公告日2003-07-09

    原文格式PDF

  • 申请/专利权人 TOSHIBA CORP;

    申请/专利号JP20010394867

  • 申请日2001-12-26

  • 分类号C04B35/581;C04B41/88;H01L23/12;H01S5/022;

  • 国家 JP

  • 入库时间 2022-08-22 00:13:40

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