Single crystal aluminum nitride film and a method of forming the same, III-nitride film for the underlying substrate, a light emitting element and surface acoustic wave device,

摘要

PROBLEM TO BE SOLVED: To provide a single crystal aluminum nitride membrane for use in an underlying substrate for the group III nitiride membrane, a luminescence element as well as a surface elastic wave devise, of which the transition density is small, the lattice inconsistencies are small and the crystallinity is excellent and that is capable of forming the group III nitride membrane with excellent luminous efficacy on the membrane.;SOLUTION: The single crystal aluminum nitride laminated substrate is provided by laminating the single crystal aluminum membrane to the most outer layer via an acid aluminum layer on a single crystal α-Al₂O₃ substrate such as a sapphire substrate, wherein the transition density of the single aluminum nitride is 10⁸/cm². The single crystal aluminum nitride membrane as well as the single crystal aluminum laminated substrate are formed by nitriding the substrate through conducting the heat treatment in the presence of nitrogen and carbon monoxide.;COPYRIGHT: (C)2004,JPO