Integration of a stack of two fluorine doped silicon oxide thin films with interconnect metallization for a sub-0.35 /spl mu/m inter-metal dielectric applications

摘要

Stable fluorine doped PETEOS and HDP-CVD silicon oxide thin films have been deposited without any capping layer. Gap-filling of 0.35 /spl mu/m metal spacing (2:1 A.R.) has been studied, and partial integration has been successfully achieved.