Antenna-coupled rectifying diode for IR detection

摘要

M antenna-coupled rectifying Schottky Barrier Diode (SBD) for IR detection is fabricated on Si by IC processes. Aluminum thin film antenna of 30 μm length and 1.5μm width is formed on thermally grown SiO{sub}2 layer on Si. At the end of antenna, rectifying SBD of 0.03 μm diameter is formed by Focused Ion Beam (FIB) milling technique. Ion current monitoring system with FIB largely reduced the size of milled hole, which is conventionally limited by ion beam waist diameter. Infrared (IR) radiation from CO{sub}2 laser of 10.6 μm in wavelength and 0.55W in power is used for device evaluations. Signal dependence on incident angle of Co2 laser radiation and dependence on diode bias voltage are evaluated. We confirmed the rectifying operation of antenna-coupled SBD at IR region and experimentally obtained rectified voltage of 173 nV. The NEP is calculated to be 1.94×10{sub}(-6) W/Hz{sup}(-1/2).