Orange AlGaInP high brightness light emitting diodes (LEDs) were fabricated by low pressure metalorganic chemical vapor deposition technology. AlGaInP double heterojunction structure was used as active layer. 15 pairs of Al$- 0.5$/Ga$-0.5$/As/AlAs distributed Bragg reflector and 7 $mu@m Al$-0.8$/Ga$-0.2$/As current spreading layer were employed to reduce the absorption of GaAs substrate and upper anode respectively. At 20 mA the LEDs emitting wavelength was between 600 - 610 nm with 18.3 nm FWHM, 0.45 mW radiation power and 1.7% external quantum efficiency. Brightness of the LED chips and LED lamps with 15$DGR viewing angle (2$theta$-$HLF$/) reached 30 mcd and 1000 mcd respectively.
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机译：橙色Algainp高亮度发光二极管（LED）由低压金属化学气相沉积技术制造。 AlGaInP双异质结结构用作有源层。 15对$ $ $ - 0.5 $ / GA $-0.5 $ / AS / AS / AS / ASI分布式布拉格反射器和7 $ MU @ M al $ -0.8 $ / GA $-0.2 $ /因为目前的撒布层被用来减少吸收GaAs衬底和上阳极。在20 mA时，发射波长的LED在600-610nm之间，具有18.3nm fwhm，0.45 mw辐射功率和1.7％的外部量子效率。 LED芯片和LED灯的亮度分别达到15美元的LED灯，分别达到30 MCD和1000 MCD。
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