High-brightness AlGaInP 573-nm light-emitting diode with a chirpedmultiquantum barrier

摘要

A novel chirped multiquantum barrier (CMQB) structure was used fornAlGaInP light-emitting devices. We have theoretically studied thenblocking efficiency of the CMQB structure and found that the CMQBnstructure is more effective in blocking the electron wave than thenconventional uniform multiquantum barrier (UMQB) structure. AlGaInPnlight emitting diodes (LEDs) with the CMQB structure and the UMQBnstructure were both fabricated and compared. It was found that thenluminescence intensity of the AlGaInP CMQB LED is larger and thenintensity distribution of the AlGaInP CMQB LED is more uniform than thenAlGaInP UMQB LED. The intensity-current measurement also shows that thenelectroluminescence intensity of the AlGaInP CMQB LED starts to saturatenat a higher injection current