GaAs/GaAlAs multiple quantum well electroreflectance modulators

摘要

In this paper, physical analyses on the characterization of the electroreflectance modulator are concerned, which include quantum confined Stark effect and asymmetric Fabry-Perot cavity effect and so on. Experimental results are provided to demonstrate the properties of normally-off and normally-on devices. The developed technology is used to tune the mode to the proper position to improve the contrast ratio of modulators.