RF monitoring test structures for advanced RF technologies working up to 100GHz with less than 80/spl mu/m width

摘要

A new RF test structure for monitoring of advanced silicon technologies and compatible with reduced scribe line dimensions (below 100 /spl mu/m width) is presented. All DC and RF obtained results are compared with extraction on classical structures and are in good agreement up to 100 GHz. This new layout approach can be extended to device RF matching parameters such as Ft mismatch monitoring.