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Mismatch characterisation of chip interconnect resistance

机译:芯片互连电阻的不匹配表征

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Many analog circuits use matched resistors on chip. The resistors have two components: the resistive elements and the interconnects. The resistive elements have good matching properties. However, the resistance of the interconnects - especially of the contacts and vias - is only guaranteed to be within certain wide limits. If the matched resistors are low-ohmic, then the interconnect dominates the mismatch equations. This is often solved by oversizing the interconnect or by avoiding structures with lots of interconnect. We prefer to characterize these interconnects or even to build resistors using only interconnects. The measurement results show that the interconnect resistance can match as well as poly resistors in the same 0.18 /spl mu/m technology.
机译:许多模拟电路在芯片上使用匹配电阻。电阻器具有两个组件:电阻元件和互连。电阻元件具有良好的匹配特性。然而,互连的电阻 - 尤其是触点和通孔 - 仅保证在某些范围内。如果匹配的电阻为低欧姆,则互连占主导地位不匹配方程。这通常通过超大互连或通过避免具有许多互连的结构来解决。我们更愿意将这些互连或甚至仅使用互连构建电阻。测量结果表明,互连电阻可以匹配以及相同的0.18 / SPL MU / M技术中的多电阻器。

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