This paper otulines the motivation behind, and fabrication process for, a novel through-wafer electrical interconnect structure. The interconect was designed in order to test the feasibility of routing electrical signals through full thickness silicon wafers. The completed interconnect is compatible with solder-based direct-chip-attach (DCA) processing and CMOS circuitry. The core of the t hroughj-wafer electrical interconnect structure consists of a high-aspect-ratio via which is subsequently insulated and metallized. On the wafer backside, an under bump metallurgy (UBM) is added around the via opening and a solder bump is formed to complete the
展开▼
机译:本文术略新颖的通过晶片电互连结构的背后和制造过程的动机。设计互连以测试通过全厚度硅晶片路由电信号的可行性。完成的互连与基于焊料的直接芯片连接(DCA)处理和CMOS电路兼容。 T HROUGHJ-WAFE电互连结构的核心由高纵横的比率和金属化组成。在晶片背面,在通孔开口处加入凸块冶金(UBM),并形成焊料凸块以完成
展开▼