Strain relaxation in step and linearly-graded InGaAs buffer layers on (001) GaAs

机译：在（001）GaAs的步骤中和线性分级的IngaAs缓冲层的应变松弛

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The strain distribution through three different graded InGaAs buffer structures (step, inverse-step and linearly-graded) deposited by Molecular Beam Epitaxy on (001) GaAs substrates and capped by InGaAs single layers is studied using Transmission Electron Microscopy and Photoluminescence. The cap layer relaxation state and the efficiency of these buffers when filtering threading dislocations are discussed.

机译：通过分子束外延上沉积的三种不同分级的InGaAs缓冲器结构（步骤，倒数步骤和线性分级）的应变分布在（001）GaAs底物上沉积并通过透射电子显微镜和光致发光地通过InGaAs单层覆盖。讨论了盖层弛豫状态和这些缓冲液在过滤穿线脱位时的效率。

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《Institute of Physics Conference on Microscopy and Semiconducting Materials》|1995年||共4页
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F J Pacheco; D Gonzalez; S I Molina; M P Villar; A Sacedon; E Calleja; R Garcia;
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2. Equilibrium Lattice Relaxation and Misfit Dislocations in Step-Graded In (x) Ga1-x As/GaAs (001) and In (x) Al1-x As/GaAs (001) Metamorphic Buffer Layers [J] . Kujofsa Tedi, Ayers John E. Journal of Electronic Materials . 2016,第6期

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3. Lattice relaxation and misfit dislocations in nonlinearly graded InxGa1 − xAs/GaAs (001) and GaAs1 − yPy/GaAs (001) metamorphic buffer layers [J] . Kujofsa Tedi, Ayers John E. Journal of Vacuum Science & Technology . 2014,第3期

机译：非线性梯度InxGa1-xAs / GaAs（001）和GaAs1-yPy / GaAs（001）变形缓冲层中的晶格弛豫和失配位错
4. Strain relaxation in step and linearly-graded InGaAs buffer layers on (001) GaAs [C] . F J Pacheco, D Gonzalez, S I Molina, Institute of Physics Conference on Microscopy and Semiconducting Materials . 1995

机译：在（001）GaAs的步骤中和线性分级的IngaAs缓冲层的应变松弛
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机译：通过动态或步进方式ALMBE-MBE的联合生长研究InGaAs / GaAs（001）缓冲液
8. Strain-relaxed InGaAs buffer layers grown by molecular-beam epitaxy for 1.3 (mu)m Fabry-Perot optical modulators [R] . Hammons, B E, Fritz, I J, Brennan, T M, 1992

机译：通过分子束外延生长的应变松弛InGaas缓冲层，用于1.3（μm）法布里 - 珀罗光调制器

Strain relaxation in step and linearly-graded InGaAs buffer layers on (001) GaAs

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