Excitonic recombinations in Cd0.90Mn0.10Te/CdTe heterostructures grown by pulsed-laser evaporation and epitaxy

摘要

Cd$-0.90$/Mn$-0.10$/Te/CdTe heterostructures grown on CdZnTe substrates by pulsed laser evaporation and epitaxy have been studied by low temperature photoluminescence. The structures were grown from fluxes of Cd-Te and Cd-Mn-Te resulting from the ablation of solid CdTe and Cd$-1$MIN@x$/Mn$-x$/Te targets with Nd:YAG and excimer XeCl lasers, respectively. The samples chosen for this work are multiple quantum wells (MQW) and superlattices (SL) with buffer and cap layers of various thicknesses and compositions. They have a fixed nominal quantum well width of 2 nm and barriers varying between 4.5 and 16.5 nm, with several combinations of CdTe and Cd$-0.90$/Mn$-0.10$/Te buffer and cap layers.